The efficiency and power density advantages of GaN are essential in meeting global energy goals without increasing costs. Global energy consumption is rising, driven by population growth and economic ...

The Sommerfeld model represents a decisive step forward compared to the Drude-Lorentz model. To repeat the experiment proposed in the previous tutorial (measurement of the effective mass of electrons ...

The input voltage range of the Variable Step Down MicroModule from 3.5 to 60 V now covers bus voltages from 5 to 48 V. Würth Elektronik has introduced a new generation of MagI³C-VDMM power modules.

The new GaN power discretes provide improved figures of merit to ensure competitive switching performance in focus applications. Infineon Technologies AG has introduced a new family of high-voltage ...

Power Integrations Launches 1700 V GaN Switcher IC. With a voltage of 1700 V, this marks a notable improvement over earlier 900 V and 1250 V devices released in 2023. Today Power Integrations ...

The initial efforts of this collaboration will focus on silicon carbide (SiC) MOSFETs in QDPAK for onboard chargers. Nexperia has announced a strategic cooperation with KOSTAL, a prominent automotive ...

This next-generation power supply achieves 98% efficiency with high-power GaNSafe™ and Gen-3 Fast SiC™ MOSFETs for AI and hyperscale data centers. Navitas Semiconductor has introduced the world’s ...

The measurement of voltage, current and the switching transitions each present their own challenges. At high voltages, the risk of injury and equipment damage increases. High-voltage floating-node ...

This tutorial will propose an experiment based on Cyclotron Resonance to measure the effective mass of electrons and holes in a semiconductor. In the previous work, we determined the mobility of ...

Transforming the electrical network involves implementing renewable energy systems at a large and small scale to fulfill the fluctuating global electricity demand. Transforming the electrical network ...

Power-cycling helps to determine how well or badly the device can withstand thermal fatigue and maintain performance over time. High-stakes applications today require a heightened level of quality and ...

The new radiation hardened HEMTKY product line integrates a HEMT transistor and a Schottky diode. A HEMTKY is a High Electron Mobility Transistor (HEMT) that incorporates an integrated Schottky diode.