Abstract: A low temperature (300°C–350°C) TiN thermal ALD process using titanium tetrachloride (TiCl 4) and anhydrous hydrazine was developed to yield films with resistivities below 200 μohm-cm.

Abstract: Titanium nitride (TiN) thin films are utilized as diffusion barriers for Co and W metal layers as well as the gate metal barrier in CMOS and memory devices due to the material’s low ...

[SMM Analysis] 2025 Titanium Market Review & 2026 Outlook: Entire Industry Chain Under Pressure, Waiting for Turnaround Titanium Industry Exports in November: Titanium Dioxide Exports Defy Market ...

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