The platform standardizes grid interaction, system integration, installation, and maintenance in large-scale electrolysis ...
Virtual synchronous machines make inverters emulate synchronous generators; SYNDEM architecture scales this approach to 108 ...
The reference design combines 650V GaN FETs, a 200 MHz digital controller and hardware security for high-density rack power conversion. The reference design uses Microchip’s dsPIC33AK digital signal ...
In this Power Corner interview, Thomas Rodgers, Head of Business Sector Electronics of Zeiss Microscopy, discusses failure ...
The collaboration combines digital control with GaN and SiC technologies to address efficiency and power-density requirements ...
The facility will combine diamond synthesis, surface preparation, metrology and process integration for semiconductor ...
The axial-leaded devices combine 6, 8 and 10 kA surge ratings with stable clamping and MIL-STD-750 screening for demanding ...
Solid-state circuit breakers (SSCBs) have many advantages over mechanical breakers. While silicon carbide (SiC)-based SSCBs ...
The DF150 operates from -46°C to +60°C and combines 91% efficiency with IP67 protection for demanding power applications.
Microchip's Kevin Speer explains why silicon carbide makes solid-state transformers practical for AI data center power.
Infineon's PSOC C3 Performance Line adds a PPCA accelerator enabling switching frequencies up to 2 MHz for GaN-based power ...
The dual SiC MOSFET module combines an 800 A drain-current rating with a 300 kA²s diode I²t rating for demanding power ...
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