Service robots assist humans in various tasks, enhancing efficiency and safety across sectors. They use power electronics for ...

NASA’s return to the Moon brings with it many challenges, including the development of communications, navigation, and ...

KRYTAR, Inc., a leader in the design and production of ultra-broadband microwave components and test equipment announces two (2) new Directional Couplers operating in the wideband frequency range of 1 ...

Sivers Semiconductors announced receiving first-year funding of $6 million from the Northeast Microelectronics Coalition (NEMC) Hub through U.S. CHIPS and Science Act under the Microelectronics ...

The ODU AMC NP is one of the world's most recognized connectors standardized on various Dismounted Soldier Systems. This connector is ideal for military and security power applications.

Finwave's high-performance, broadband RF switches utilize unique GaN on Si technology to offer a combination of fast switching and fast settling times, broadband operation, and robust power handling.

With a focus on innovation and technical excellence, Marki Microwave offers a diverse range of products to meet the needs of customers across various applications.

The QPD0020 is a 35 Watt unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and can ...

The dB-9003 is a custom-mounted Integrated Stabilized RF Source (ISRFS) operating in the I-Band frequency range providing highly accurate RF Source at high frequency switching speeds. The ISRFS can be ...

XtendedFlex™ is a solution for applications requiring constant cable motion and flexibility. Its innovative design and unique material composition ensure consistent performance under millions of ...

The Model 7000SP2G4 is a self-contained, forced-air-cooled, broadband solid-state microwave amplifier designed for pulse applications at low duty factors where instantaneous bandwidth and high gain ...

The QPD0012 is a dual-path discrete GaN on SiC HEMT in DFN package which operates from 2.5 to 2.7 GHz. The device is a single-stage power amplifier transistor for Doherty application.