Combining market modeling and in-depth device analysis, Yole Group shows how IGBTs retain strategic value across automotive, renewable energy sources, and industrial power systems. The IGBT market is ...

Shrinking silicon transistors have reached their physical limits, but a team from the University of Tokyo is rewriting the rules. They've created a cutting-edge transistor using gallium-doped indium ...

Since its first demonstration in 1982 by General Electric, the silicon-derived IGBT has evolved substantially in the last 40+ years. Since its first demonstration in 1982 by General Electric (GE), the ...

Responding to the growing demand for high-voltage automotive IGBT chips, Infineon Technologies developed a new generation of products: the EDT3 (Electric Drive Train, 3rd generation) chips designed ...

Infineon Technologies AG is responding to the growing demand for high-voltage automotive IGBT chips by launching a new generation of products. Among these offerings are the EDT3 (Electric Drive Train, ...

Infineon Technologies is responding to the growing demand for high-voltage automotive IGBT chips by launching a new generation of products. Among these offerings are the EDT3 (Electric Drive Train, ...

Infineon’s latest EDT3 IGBT chip technology is now integrated into the HybridPACK™ Drive G2 automotive power module. Infineon Technologies AG is addressing the increasing demand for high-voltage IGBT ...

Cambridge GaN Devices’s hybrid architecture for power modules combines gallium-nitride and IGBT devices to give EV designers an efficient, affordable solution for drivetrains and accessories. CGD's ...

SEOUL, South Korea--(BUSINESS WIRE)--Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced the launch of two new 6th-generation (Gen6) 650V Insulated Gate Bipolar ...

Abstract: The Insulated Gate Bipolar Transistor (IGBT) is a critical component of power electronic equipment, and the health of the IGBT device is of utmost importance to ensure the reliability and ...

Opportunities in electric vehicles, automation, data centres and renewables will underpin the growth of the SiC MOSFET, as well as its lower performance, but cheaper alternative, the silicon IGBT.

Insulated gate bipolar transistors (IGBTs) are a type of power semiconductor device that combine the best features of both bipolar junction transistors (BJTs) and metal-oxide semiconductor ...