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WEBNichia to show latest automotive lighting. Georgia Tech hub to use ClassOne technology. Bluglass to supply GaN lasers for maritime LiDAR. CRAIC unveils new Raman microscope. ASM launches advanced SiC epitaxy system. Lynred to show smallest thermal imaging sensor. Riber announces MBE cluster order from Vexlum.
CS Mantech: Strengthening the credentials of the III-V transistor
WEBMay 30, 2022 — One of the leading III-V foundries that is working on a portfolio of sub-terahertz transistors is WIN Semiconductors of Taiwan. According to Cheng-Kuo Lin, who spoke on behalf of the company at CS Mantech, new device designs are needed to reach this frequency domain. That’s because the company’s established technologies – the …
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A Coherent plan for SiC - News - Compound Semiconductor
WEBOct 18, 2023 — Through the licensing of General Electric’s SiC MOSFET technology, Coherent has been qualifying 1200 V and 1700 V devices that meet the Automotive Electronics Council AEC-Q101 standard. “If you look at the power market, they guarantee 175 degrees C,” says Khan. “We guarantee 200 degrees C operation. Our devices are very rugged and go ...
Gallium oxide vertical transistor has highest breakdown voltage
WEBAug 5, 2021 — Novel Crystal Technology has developed a β-Ga 2 O 3 vertical transistor with the world's highest breakdown voltage of 4.2 kV. This is 1.6 times higher than the breakdown voltage of conventional transistors. Figure 1 (above) shows a cross section of the newly developed β-Ga 2 O 3 vertical MOS transistor.. The transistor is a vertical device structure that is advantageous for meeting the low ...
Qromis: ready for business - News - Compound Semiconductor
WEBFeb 24, 2020 — Qromis: ready for business - News. As the GaN market gathers momentum, Qromis is serving up fab-friendly substrates and epi-wafers to ease device manufacture. In January this year, Silicon Valley based Qromis, revealed two developments that signal the company is on the cusp of rapid expansion. For starters, the …
EPC and VIS collaborate on 8-inch power GaN - News
WEBDec 6, 2022 — EPC will use VIS’ 8-inch (200 mm) wafer fabrication capabilities, significantly increasing manufacturing capacities for EPC’s high-performance GaN transistors and integrated circuits. Manufacturing will commence in early 2023. The products manufactured at VIS, an Automotive IATF 16949 certified foundry, …
IQE delivers first 8 inch VCSEL wafers - News - Compound …
WEBMay 11, 2022 — IQE plc, a supplier of compound semiconductor wafer products and advanced materials, has announced the world’s first commercially available 200 mm (8 inch) VCSEL epiwafer. IQE says its 200mm epiwafers will enable a step-change in unit economics for compound semiconductors, leading to the expansion of the market for IQE.
Shifting to 200 mm silicon carbide - News - Compound …
WEBFor the ease of achieving good wafer geometry, there is an increase in wafer thickness as the wafer diameter grows. 150 mm-diameter SiC wafers have a thickness of 350 μm, and the initial 200 mm SiC substrates introduced to the market will be 500 μm-thick. As increased thickness reduces the number of wafers made from each puck, there is a ...
Wet chemical etching for defect-free AlGaInP red micro-LEDs
WEBAug 22, 2024 — Recently, Verticle, a San Francisco-based firm specialising in the development of LEDs and related displays, has reported a breakthrough in a method of mesa etching of AlGaInP native red micro-LEDs by 'defect-free' wet chemical etching. According to Mike Yoo, Verticle's CEO, the company is ready to apply this wet etching technology to mass ...